Interdiffusion effect on GaAsSbN/GaAs quantum well structure studied by 10-band k• p model

Autor: Dang, Y.X., Fan, W.J., Ng, S.T., Wicaksono, S., Yoon, S.F., Zhang, D.H.
Zdroj: In Thin Solid Films 2007 515(10):4435-4440
Databáze: ScienceDirect