Transient turn-on characteristics of Si RBDT and SiC MOSFET under nanosecond current pulse range
| Autor: | Qing, Zhengheng, Liang, Lin, Liu, Tong |
|---|---|
| Zdroj: | In Solid State Electronics July 2024 217 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Qing, Zhengheng, Liang, Lin, Liu, Tong |
|---|---|
| Zdroj: | In Solid State Electronics July 2024 217 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect