TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
| Autor: | Lomonaco, J., Rostand, N., Martinie, S., Bournel, A. |
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| Zdroj: | In Solid State Electronics January 2024 211 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect