TCAD modeling of bias temperature instabilities in SiC MOSFETs
| Autor: | Carangelo, G., Reggiani, S., Consentino, G., Crupi, F., Meneghesso, G. |
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| Zdroj: | In Solid State Electronics November 2021 185 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Carangelo, G., Reggiani, S., Consentino, G., Crupi, F., Meneghesso, G. |
|---|---|
| Zdroj: | In Solid State Electronics November 2021 185 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect