Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact
| Autor: | Liu, Mingshan, Mertens, Konstantin, von den Driesch, Nils, Schlykow, Viktoria, Grap, Thomas, Lentz, Florian, Trellenkamp, Stefan, Hartmann, Jean-Michel, Knoch, Joachim, Buca, Dan, Zhao, Qing-Tai |
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| Zdroj: | In Solid State Electronics June 2020 168 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect