Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
| Autor: | Boudier, D., Cretu, B., Simoen, E., Veloso, A., Collaert, N. |
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| Zdroj: | In Solid State Electronics May 2018 143:27-32 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect