Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique
| Autor: | Kolkovsky, Vl., Stübner, R., Langa, S., Wende, U., Kaiser, B., Conrad, H., Schenk, H. |
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| Zdroj: | In Solid State Electronics September 2016 123:89-95 |
| Databáze: | ScienceDirect |
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