Integration of MOSFETs with SiGe dots as stressor material
| Autor: | Nanver, L.K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J.J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O.G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., van der Cingel, J., Bonera, E. |
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| Zdroj: | In Solid State Electronics 2011 60(1):75-83 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect