High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs
| Autor: | Le Royer, C., Damlencourt, J.-F., Vincent, B., Romanjek, K., Le Cunff, Y., Grampeix, H., Mazzocchi, V., Carron, V., Némouchi, F., Hartmann, J.-M., Arvet, C., Vizioz, C., Tabone, C., Hutin, L., Batude, P., Vinet, M. |
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| Zdroj: | In Solid State Electronics 2011 59(1):2-7 |
| Databáze: | ScienceDirect |
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