A SrRuO 3/IrO 2 top electrode FeRAM with Cu BEOL process for embedded memory of 130 nm generation and beyond

Autor: Kumura, Y., Ozaki, T., Kanaya, H., Hidaka, O., Shimojo, Y., Shuto, S., Yamada, Y., Tomioka, K., Yamakawa, K., Yamazaki, S., Takashima, D., Miyakawa, T., Shiratake, S., Ohtsuki, S., Kunishima, I., Nitayama, A.
Zdroj: In Solid State Electronics 2006 50(4):606-612
Databáze: ScienceDirect