Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
| Autor: | Johnson, J.W, Han, J, Baca, A.G, Briggs, R.D, Shul, R.J, Wendt, J.R, Monier, C, Ren, F, Luo, B, Chu, S.N.G, Tsvetkov, D, Dmitriev, V, Pearton, S.J |
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| Zdroj: | In Solid State Electronics 2002 46(4):513-523 |
| Databáze: | ScienceDirect |
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