Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation
| Autor: | Croci, S., Voisin, J.M., Plossu, C., Raynaud, C., Autran, J.L., Boivin, P., Mirabel, J.M. |
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| Zdroj: | In Microelectronics Reliability 1999 39(6):879-884 |
| Databáze: | ScienceDirect |
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