The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs
Autor: | Wang, Haibin, Nie, Zhichao, Huang, Xiaofeng, Gu, Jianghao, Tan, Zhixin, Jing, Hantao, Mo, Lihua, Hu, Zhiliang, Wang, Xueming |
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Zdroj: | In Microelectronics Reliability December 2024 163 |
Databáze: | ScienceDirect |
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