The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs

Autor: Wang, Haibin, Nie, Zhichao, Huang, Xiaofeng, Gu, Jianghao, Tan, Zhixin, Jing, Hantao, Mo, Lihua, Hu, Zhiliang, Wang, Xueming
Zdroj: In Microelectronics Reliability December 2024 163
Databáze: ScienceDirect