A comprehensive investigation of total ionizing dose effects on bulk FinFETs through TCAD simulation
| Autor: | Gong, Yanfei, Chen, Xingtong, Zhao, Qiang, Li, Zhensong, Li, Yueqin, Fan, Jieqing, Hao, Jianhong, Zhang, Fang, Dong, Zhiwei |
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| Zdroj: | In Microelectronics Reliability December 2024 163 |
| Databáze: | ScienceDirect |
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