Gate bias stress reliability of a-InGaZnO TFTs under various channel dimension
| Autor: | Cho, Jaewoong, Choi, Jiwon, Nguyen, Minh Phuong, Trinh, Thanh Thuy, Song, Jang-Kun, Kim, Yong-Sang, Pham, Duy Phong, Yi, Junsin |
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| Zdroj: | In Microelectronics Reliability February 2024 153 |
| Databáze: | ScienceDirect |
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