Gate stress reliability of a novel trench-based Triple Gate Transistor

Autor:	Gay, R., Marca, V. Della, Aziza, H., Laine, P., Regnier, A., Niel, S., Marzaki, A.
Zdroj:	In Microelectronics Reliability November 2021 126
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect