Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
| Autor: | Simicic, Marko, Ashif, Nowab Reza, Hellings, Geert, Chen, Shih-Hung, Nag, Manoj, Kronemeijer, Auke Jisk, Myny, Kris, Linten, Dimitri |
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| Zdroj: | In Microelectronics Reliability May 2020 108 |
| Databáze: | ScienceDirect |
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