Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
| Autor: | Rzin, M., Meneghini, M., Rampazzo, F., Zhan, V. Gao, De Santi, C., Kabouche, R., Zegaoui, M., Medjdoub, F., Meneghesso, G., Zanoni, E. |
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| Zdroj: | In Microelectronics Reliability September 2019 100-101 |
| Databáze: | ScienceDirect |
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