Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
| Autor: | Ahn, W., Shin, S.H., Jiang, C., Jiang, H., Wahab, M.A., Alam, M.A. |
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| Zdroj: | In Microelectronics Reliability February 2018 81:262-273 |
| Databáze: | ScienceDirect |
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