Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation
| Autor: | Juang, Miin-Horng a, ⁎, Yu, Jim a, Hwang, C.C. b, Shye, D.C. b, Wang, J.L. b |
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| Zdroj: | In Microelectronics Reliability 2011 51(2):365-369 |
| Databáze: | ScienceDirect |
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