Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices
| Autor: | Strobel, S, Bauer, A.J, Beichele, M, Ryssel, H |
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| Zdroj: | In Microelectronics Reliability 2001 41(7):1085-1088 |
| Databáze: | ScienceDirect |
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