Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers

Autor: Carrère, H., Truong, V.G., Marie, X., Amand, T., Urbaszek, B., Brenot, R., Lelarge, F., Rousseau, B.
Zdroj: In Microelectronics Journal April-May 2009 40(4-5):827-829
Databáze: ScienceDirect