Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

Autor: Xu, W., Zeng, Z., Wright, A.R., Zhang, C., Zhang, J., Lu, T.C.
Zdroj: In Microelectronics Journal April-May 2009 40(4-5):809-811
Databáze: ScienceDirect
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