Charge buildup effects in asymmetric p-type resonant tunneling diodes
| Autor: | Galvão Gobato, Y., Brasil, M.J.S.P., Camps, I., de Carvalho, H.B., dos Santos, L.F., Marques, G.E., Henini, M., Eaves, L., Hill, G. |
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| Zdroj: | In Microelectronics Journal March-June 2005 36(3-6):356-358 |
| Databáze: | ScienceDirect |
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