Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements
| Autor: | Burignat, S., Plossu, C., Boivin, P. |
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| Zdroj: | In Journal of Non-Crystalline Solids 2007 353(16):1624-1630 |
| Databáze: | ScienceDirect |
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