Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible

Autor: Anbu, G., Srinivasan Supervisor, M., Aravindan, G., Avinash Kumar, M., Ramasamy, P., Sun, Niefeng, Sun, Tongnian, Li, Zaoyang
Zdroj: In Journal of Crystal Growth 15 May 2022 586
Databáze: ScienceDirect