Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy
| Autor: | Zhang, J., Chen, X.Y., Ma, Y.J., Gong, Q., Shi, Y.H., Yang, N.N., Huang, H., He, G.X., Gu, Y., Zhang, Y.G. |
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| Zdroj: | In Journal of Crystal Growth 15 April 2019 512:84-89 |
| Databáze: | ScienceDirect |
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