Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process
| Autor: | Tan, K.H., Jia, B.W., Loke, W.K., Wicaksono, S., Yoon, S.F. |
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| Zdroj: | In Journal of Crystal Growth 1 October 2015 427:80-86 |
| Databáze: | ScienceDirect |
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