Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiN x treatment
| Autor: | Ashraf, H., Sridhara Rao, D.V., Gogova, D., Siche, D., Fornari, R., Humphreys, C.J., Hageman, P.R. |
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| Zdroj: | In Journal of Crystal Growth 2010 312(4):595-600 |
| Databáze: | ScienceDirect |
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