Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

Autor: Yakovlev, E.V. *, Talalaev, R.A., Makarov, Yu.N., Yavich, B.S., Wang, W.N
Zdroj: In Journal of Crystal Growth 2004 261(2):182-189
Databáze: ScienceDirect