Material optimisation for AlGaN/GaN HFET applications
| Autor: | Bougrioua, Z. *, Moerman, I., Sharma, N., Wallis, R.H., Cheyns, J., Jacobs, K., Thrush, E.J., Considine, L., Beanland, R., Farvacque, J.-L., Humphreys, C. |
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| Zdroj: | In Journal of Crystal Growth 2001 230(3):573-578 |
| Databáze: | ScienceDirect |
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