Effect of RTCVD growth conditions on the crystal quality of pseudomorphic Si1−x −yGexCy films

Autor: Mi, Jian, Warren, Patricia, Letourneau, Pascal, Judelewicz, Moshe, Gailhanou, Marc, Dutoit, Michel
Zdroj: In Selected Topics in Group IV and II–VI Semiconductors 1996:190-194
Databáze: ScienceDirect