Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
| Autor: | Liu Wenjun, Zheng Hemei, Ang Kahwee, Zhang Hao, Liu Huan, Han Jun, Liu Weiguo, Sun Qingqing, Ding Shijin, Zhang David Wei |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Nanophotonics, Vol 9, Iss 7, Pp 2053-2062 (2020) |
| Druh dokumentu: | article |
| ISSN: | 2192-8606 2192-8614 |
| DOI: | 10.1515/nanoph-2020-0075 |
| Popis: | Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on the atomic layer deposited AlN/SiO2/Si substrate is demonstrated. Electrical measurement results show that BP FETs on the AlN substrate possess superior electrical performance compared with those fabricated on the conventional SiO2/Si substrate. It exhibits a large on-off current ratio of 5 × 108, a low subthreshold swing of |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
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