| Autor: |
C W Rischau, A Ubaldini, E Giannini, C J van der Beek |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 18, Iss 7, p 073024 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/18/7/073024 |
| Popis: |
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi _2 Te _3 . The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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