Autor: |
Tim Böckendorf, Jan Kirschbaum, Felix Kipke, Dominique Bougeard, John Lundsgaard Hansen, Arne Nylandsted Larsen, Matthias Posselt, Hartmut Bracht |
Jazyk: |
angličtina |
Rok vydání: |
2024 |
Předmět: |
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Zdroj: |
AIP Advances, Vol 14, Iss 6, Pp 065129-065129-8 (2024) |
Druh dokumentu: |
article |
ISSN: |
2158-3226 |
DOI: |
10.1063/5.0183578 |
Popis: |
Self-diffusion in amorphous germanium is studied at temperatures between 325 and 370 °C utilizing amorphous isotopically controlled germanium multilayer structures. The isotope multilayer is epitaxially grown on a single crystalline germanium-on-insulator structure by means of molecular beam epitaxy and subsequently amorphized by self-ion implantation. After heat treatment, the diffusional broadening of the isotope structure is measured with time-of-flight secondary ion mass spectrometry. The temperature dependence of self-diffusion is accurately described by the Arrhenius equation with the activation enthalpy Q = (2.21 ± 0.12) eV and pre-exponential factor D0=(2.32−2.10+20.79) cm2 s−1. The activation enthalpy equals the activation enthalpy of solid phase epitaxial recrystallization (SPER). This agreement suggests that self-diffusion in amorphous germanium is similar to SPER, also mainly mediated by local bond rearrangements. Classical molecular dynamics simulations with a modified Stillinger–Weber-type interatomic potential yield results that are consistent with the experimental data and support the proposed atomic mechanism. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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