| Autor: |
Masamichi Akazawa, Naoshige Yokota, Kei Uetake |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 2, Pp 025310-025310-7 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5017891 |
| Popis: |
We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5×1011 cm-2, which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance–voltage (C–V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C–V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800oC, the density of the deep-level defects was reduced and the carrier concentration partially recovered. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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