Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Autor: Lanza Mario, Iglesias Vanessa, Porti Marc, Nafria Montse, Aymerich Xavier
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Nanoscale Research Letters, Vol 6, Iss 1, p 108 (2011)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
Popis: Abstract In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
Databáze: Directory of Open Access Journals