Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
Autor: | Lanza Mario, Iglesias Vanessa, Porti Marc, Nafria Montse, Aymerich Xavier |
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Jazyk: | angličtina |
Rok vydání: | 2011 |
Předmět: | |
Zdroj: | Nanoscale Research Letters, Vol 6, Iss 1, p 108 (2011) |
Druh dokumentu: | article |
ISSN: | 1931-7573 1556-276X |
Popis: | Abstract In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. |
Databáze: | Directory of Open Access Journals |
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