| Autor: |
Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Samuel James Bader, James C. M. Hwang, Huili Grace Xing, Debdeep Jena |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 121-124 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2020.3042050 |
| Popis: |
The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current of 3.6 A/mm, and record maximum oscillation frequency ( $f_{max}$ ) of 233 GHz. The load-pull power sweep at 10 GHz demonstrate a peak power added efficiency (PAE) of 22.7% with an associated gain ( $G_{T}$ ) of 8.7 dB and output power ( $P_{out}$ ) of 3 W/mm. When optimized for power, the peak $P_{out}$ of 3.3 W/mm has an associated PAE of 14.7% and $G_{T}$ of 3.2 dB. This first demonstration is encouraging for the mm-wave power potential of the AlN/GaN/AlN HEMT. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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