| Autor: |
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 12, Iss 5, p 509 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi12050509 |
| Popis: |
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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