| Autor: |
Alexandra V. Galeeva, Alexey I. Artamkin, Alexey S. Kazakov, Sergey N. Danilov, Sergey A. Dvoretskiy, Nikolay N. Mikhailov, Ludmila I. Ryabova, Dmitry R. Khokhlov |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1035-1039 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2190-4286 |
| DOI: |
10.3762/bjnano.9.96 |
| Popis: |
Terahertz photoconductivity in heterostructures based on n-type Hg1−xCdxTe epitaxial films both in the topological phase (x < 0.16, inverted band structure, zero band gap) and the trivial state (x > 0.16, normal band structure) has been studied. We show that both the positive photoresponse in films with x < 0.16 and the negative photoconductivity in samples with x > 0.16 have no low-energy threshold. The observed non-threshold positive photoconductivity is discussed in terms of a qualitative model that takes into account a 3D potential well and 2D topological Dirac states coexisting in a smooth topological heterojunction. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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