Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S

Autor:	Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily
Jazyk:	angličtina
Rok vydání:	2001
Předmět:	Submicrometer MOSFET's Impact ionization Substrate current Temperature Channel length. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 24, Iss 3, Pp 201-209 (2001)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/2001/65128
Popis:	In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L decrease from 2 to 0.1 μm, this behaviour found expression in a fast increase of the substrate current maximum Isubmax⁡. Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.
Databáze:	Directory of Open Access Journals
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