| Autor: |
Hyun-Woong Choi, Ki-Woo Song, Seong-Hyun Kim, Kim Thanh Nguyen, Sunil Babu Eadi, Hyuk-Min Kwon, Hi-Deok Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-022-05150-w |
| Popis: |
Abstract The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc oxide) memristors were investigated for synapse application. The use of the oxide bi-layer memristors, in particular, improved electrical properties such as stability, memristor reliability, and an increase in synaptic weight states. The set voltage of bi-layer IGZO/ZnO memristors was 0.9 V, and the reset voltage was around − 0.7 V, resulting in a low-operating voltage for neuromorphic systems. The oxygen vacancies in the X-ray photoelectron spectroscopy analysis played a role in the modulation of the high-resistance state (HRS) (oxygen-deficient) and the low-resistance state (oxygen-rich) region. The VRESET of the bi-layer IGZO/ZnO memristors was lower than that of a single IGZO, which implied that oxygen-vacancy filaments could be easily ruptured due to the higher oxygen vacancy peak HRS layer. The nonlinearity of the LTP and LTD characteristics in a bi-layer IGZO/ZnO memristor was 6.77% and 11.49%, respectively, compared to those of 20.03% and 51.1% in a single IGZO memristor, respectively. Therefore, the extra ZnO layer in the bi-layer memristor with IGZO was potentially significant and essential to achieve a small set voltage and a reset voltage, and the switching behavior to form the conductive path. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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