Autor: |
R. Wu, J.-Z. Ma, S.-M. Nie, L.-X. Zhao, X. Huang, J.-X. Yin, B.-B. Fu, P. Richard, G.-F. Chen, Z. Fang, X. Dai, H.-M. Weng, T. Qian, H. Ding, S. H. Pan |
Jazyk: |
angličtina |
Rok vydání: |
2016 |
Předmět: |
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Zdroj: |
Physical Review X, Vol 6, Iss 2, p 021017 (2016) |
Druh dokumentu: |
article |
ISSN: |
2160-3308 |
DOI: |
10.1103/PhysRevX.6.021017 |
Popis: |
Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe_{5} crystal hosts a large full gap of ∼100 meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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