| Autor: |
Seung-Hye Baek, Dae-Choul Choi, Yoon Seok Kim, Hyunseok Na, Sung-Nam Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Photonics, Vol 10, Iss 10, p 1103 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics10101103 |
| Popis: |
This paper investigates the intriguing impact of surface V-shaped defects on the electrical and optical characteristics of GaN-based LEDs, particularly under reverse bias conditions. These defects introduce unique luminescence phenomena, notably giant dot-like luminescence (GDL), and exert significant influence on device performance. The size of these V-shaped defects plays a critical role: larger defects generate more indium-rich regions at their base, resulting in elevated tensile stress. This heightened stress promotes carrier tunneling, increasing reverse leakage current and leads to GDL formation. However, even with multiple V-shaped defects present, localized failure predominantly occurs at the defect experiencing the highest tensile stress, substantially reducing the breakdown voltage. Micro-Raman analysis further reveals distinct Raman shifts and increased tensile stress in these regions. These findings underscore the complexity of V-shaped defects’ effects, highlighting their importance in GaN-based LED design and optimization. Recognizing their influence on electrical and optical properties can significantly impact device reliability and performance, particularly in reverse bias conditions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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