| Autor: |
Peng Tseng, Wen-Jeng Hsueh |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 21, Iss 11, p 113035 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/ab531f |
| Popis: |
Pursuing larger tunnel magnetoresistance is a significant work to develop attractive spin-valve devices for high-performance read heads of hard disk drives, magnetic random access memories, and transistors. Here, we propose an ultra-giant magnetoresistance reaching higher than 40 000% at room temperature by using a spin valve of an armchair graphene nanoribbon with double gate-controlled potential barriers. The ultra-giant magnetoresistance approximately 60 times larger than that of traditional MgO-barrier spin valves is caused by an extraordinary current suppression in the antiparallel mode. Moreover, owing to the concept of the gate-voltage barrier, the proposed system provided not only lower complexity of the fabricating standard but also longer endurance of the operation than traditional spin-valve devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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