| Autor: |
Takeya Hirose, Yuki Okamoto, Yusuke Komura, Toshiki Mizuguchi, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Hiroki Inoue, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Hajime Kimura, Takanori Matsuzaki, Makoto Ikeda, Shunpei Yamazaki |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 12, Pp 236-242 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2024.3372053 |
| Popis: |
We present a three-dimensional (3D) DRAM prototype, which is formed using oxide semiconductor FETs (OSFETs) monolithically stacked on a Si CMOS. The OSFETs are composed of a one-layer planar FET and two-layer vertical FETs (VFETs). The 1T1C memory cells in the VFET layers and a primary sense amplifier in the planar FET layer, which are formed using heterogeneous OSFETs, provide various circuit functions in the DRAM. The operation of the 3D DRAM in a 1-Mbit memory array is demonstrated for the first time. The results show that the proposed DRAM operates with read and write times of 60 ns and 50 ns, respectively. The leakage current of the memory cell is extremely low (comparable to an $2.2\times 10^{-19}$ A/cell at 85°C), indicating that over 99% of the data are retained in the memory array after one hour at 85°C without refresh. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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