| Autor: |
Søren Roesgaard, Jacques Chevallier, Peter I. Gaiduk, John Lundsgaard Hansen, Pia Bomholt Jensen, Arne Nylandsted Larsen, Axel Svane, Peter Balling, Brian Julsgaard |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 5, Iss 7, Pp 077114-077114-6 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4926596 |
| Popis: |
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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