High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Autor:	Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	scanning probe microscopy scanning capacitance microscopy 4H-SiC power-MOSFET Chemistry QD1-999
Zdroj:	Nanomaterials, Vol 11, Iss 6, p 1626 (2021)
Druh dokumentu:	article
ISSN:	11061626 2079-4991
DOI:	10.3390/nano11061626
Popis:	In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/8de91cf8224c48cf9041b0afcab35dc0 Zobrazit plný text záznamu View record in DOAJ