| Autor: |
Jian-Hong Ke, Ching-Sung Lee, Yu-Xuan Li, Wei-Chou Hsu |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 421-425 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3294911 |
| Popis: |
This work reports record-high three-terminal on-state drain-source breakdown voltage $(BV_{DS})$ of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface passivation by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/drain ohmic contacts were obtained by devising an Mg-doped p++-GaN capper. Enhanced two-dimension hole gas (2DHG) characteristics and current densities have also been achieved by the devised p-GaN/GaN/AlN/Al0.3Ga0.7N heterostructure. The present p-channel GaN MOS-HFET design with (without) DFP has demonstrated superior on/off current ratio $(I_{on}/I_{off}$ ) of $2\times 10^{6}$ ( $9.2\times10\,\,^{\mathrm{ 5}}$ ), maximum drain-source current density $(I_{DS, max})$ of −9.5 (−10.6) mA/mm at $V_{DS}\,\,=$ 20 V, two-terminal off-state gate-drain breakdown voltage $(BV_{GD})$ of 710 (520) V, and $BV_{DS}$ of −735 (−545) V, respectively. The present design is suitable for applications in high-voltage complementary power-switching circuits of electric vehicle (EV) electronics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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