| Autor: |
Der-Yuh Lin, Hung-Pin Hsu, Chi-Feng Tsai, Cheng-Wen Wang, Yu-Tai Shih |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Molecules, Vol 26, Iss 8, p 2184 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
1420-3049 |
| DOI: |
10.3390/molecules26082184 |
| Popis: |
In this study, a series of SnS2-xSex (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical–vapor transport method. The crystal structural and material phase of SnS2-xSex layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnS2-xSex compounds was measured in the temperature range of 20–300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnS2-xSex were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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